Title :
A 1/4 inch 330 k square pixel progressive-scan IT-CCD image sensor with submicrometer channel width
Author :
Kuroda, T. ; Matsuda, Y. ; Ishikawa, K. ; Tachikawa, K. ; Masuyama, M. ; Asaumi, M. ; Niwayama, M. ; Yamada, T. ; Miyata, Y. ; Niisoe, N. ; Terakawa, S.
Author_Institution :
Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
Abstract :
A 1/4 inch IT-CCD with 640 (H)/spl times/480 (V) square pixels is described. In a progressive-scan CCD, the gate area for charge storage during vertical charge transfer decreases to less than half compared with a conventional CCD. The first objective is increased charge handling capability per unit gate area to compensate for the gate area decrease. The second is suppression of narrow and/or short-channel effect that is important in IT-CCD with channel area shrinkage. Two techniques overcome these problems. One is to avoid the decrease of effective channel width due to alignment error in stepper lithography that has a significant influence in a narrow-channel CCD. To this end, pixel design and processing are improved so one mask step for the buried channel determines channel width (regulated by three mask steps in a conventional CCD). The other is improvement of the doping profile.
Keywords :
CCD image sensors; doping profiles; integrated circuit technology; lithography; masks; semiconductor doping; 0.25 in; 307200 pixel; 480 pixel; 640 pixel; channel area shrinkage; charge handling capability; doping profile; gate area decrease; image sensor; mask step; narrow-channel effect; progressive-scan IT-CCD; short-channel effect; square pixels; submicrometer channel width; Charge coupled devices; Charge transfer; Circuits; Doping profiles; Image sensors; Lithography; Pixel; Process design; Roentgenium; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488563