DocumentCode
3270126
Title
Terahertz photomixing in low-temperature-grown GaAs
Author
Brown, E.R. ; Verghese, S. ; McIntosh, K.A.
Author_Institution
Lincoln Lab., MIT, Lexington, MA
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Abstract
This presentation will begin by contrasting the LTG-GaAs photomixer against other solid-state generation techniques being pursued in the far-infrared region, including three-wave mixing and electronic frequency multiplication. The second part of the presentation will review recent experiments aimed at overcoming the efficiency limits and in achieving power levels above 1 μW. The final part of the presentation will focus on the implementation of the photomixer in scientific instruments for astronomy, chemistry, and metrology
Keywords
III-V semiconductors; gallium arsenide; optical frequency conversion; submillimetre wave mixers; 1 muW; GaAs; LTG-GaAs photomixer; low-temperature-grown GaAs; solid-state far-infrared generation; terahertz photomixing; Electrodes; Frequency; Gallium arsenide; Laboratories; Local oscillators; Photoconductivity; Power generation; Solid state circuits; Space technology; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645468
Filename
645468
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