DocumentCode
3270141
Title
High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field
Author
Ohtake, Hideyuki ; Izumida, Shinji ; Liu, Zhenlin ; Yamanaka, Takaya ; Sarukura, Nobuhiko
Author_Institution
Inst. for Molecular Sci., Okazaki, Japan
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
364
Abstract
In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 μW under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation
Keywords
high-speed optical techniques; laser beam effects; magneto-optical effects; semiconductor materials; solid lasers; 1.7 T; 100 fs; 110 muW; 760 nm; THz-radiation power; ellipticity; femtosecond optical-pulse irradiated semiconductors; femtosecond-optical pulse; fsec pulses; high average power THz-radiation; magnetic field; mode-locked Ti:sapphire laser; Absorption; Gallium arsenide; Magnetic fields; Optimized production technology; Physics; Polarization; Solids; Ultrafast electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645469
Filename
645469
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