Characterization of arsenic-ion-implanted GaAs by optically excited terahertz radiation

Author

Lin, Gong-Ru ; Pan, Ci-Ling ; Wu, Q. ; Zhang, X.-C.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

366

Abstract

Summary form only given. Optically-excited terahertz (THz) radiation from unbiased semiconductors have been an important field of ultrafast optoelectronics since its discovery a few years ago. In this work, we report for the first time measurement of THz radiation from unbiased, as-implanted and post-annealed GaAs:As⁺ samples. The effect of thermal annealing time on depletion field, effective carrier mobility, as well as the peak THz radiating frequency of unbiased GaAs:As⁺ are investigated

Keywords

III-V semiconductors; annealing; arsenic; carrier mobility; gallium arsenide; high-speed optical techniques; ion implantation; magneto-optical effects; GaAs:As; THz radiation; arsenic-ion-implanted GaAs; as-implanted post-annealed GaAs:As⁺ samples; depletion field; effective carrier mobility; optically excited terahertz radiation; optically-excited THz radiation; peak THz radiating frequency; semiconductors; thermal annealing time; ultrafast optoelectronics; Annealing; Frequency; Gallium arsenide; Near-field radiation pattern; Nonlinear optics; Optical pumping; Optical sensors; Reflectivity; Time measurement; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645470

Filename

645470