• DocumentCode
    3270253
  • Title

    Nano-structured surface fabrication for higher luminescent LED by self-assembled block copolymer

  • Author

    Fujimoto, Akira ; Asakawa, Koji

  • Author_Institution
    Corporate R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2005
  • fDate
    25-28 Oct. 2005
  • Firstpage
    76
  • Lastpage
    77
  • Abstract
    Nano-patterned structures were fabricated by a self-assembled block copolymer process. The nano-patterned structure on GaP with a diameter of 100 nm, a period of 150-200 nm, and a height of 400 nm was fabricated. The extraction efficiency of the fabricated surface on the GaP was increased 2.6 times compared with that of the flat surface. The luminance of the LED tip having the patterned structure increased 1.5 times compared with that of the conventional LED tip.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; light emitting diodes; luminescence; nanopatterning; polymer blends; self-assembly; 100 nm; 150 to 200 nm; 400 nm; GaAs-AlGaAs; GaP; LED tip luminance; nano-patterned structures; nano-structured surface fabrication; self assembled block copolymer process; Annealing; Color; Dry etching; Fabrication; Light emitting diodes; Nanostructures; Photonic crystals; Plasma applications; Self-assembly; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2005 International
  • Print_ISBN
    4-9902472-2-1
  • Type

    conf

  • DOI
    10.1109/IMNC.2005.203745
  • Filename
    1595221