Simulation study of 1.2 kV 4H-SiC DIMOSFET structures

Author

Chen, L. ; Guy, O.J. ; Jennings, M.R. ; Wilks, S.P. ; Mawby, P.A.

Author_Institution

Sch. of Eng., Univ. of Wales, Swansea, UK

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2341

Abstract

Numerical device simulations on a 4H-SiC 1.2 kV vertical MOSFET are presented. The TMA MEDICI device simulator was employed to carry out a characterization study of double implanted MOSFET (DIMOSFET) structures. Appropriate material parameters were adjusted for the 4H-SiC polytype used in this study. The simulations mainly focus on the reverse blocking voltage, threshold voltage, forward characteristics, and on state resistance evaluations. Optimized parameters are given for the specific designed structure.

Keywords

optimisation; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 1.2 kV; 4H-SiC DIMOSFET; SiC; device optimized design parameters; double implanted MOSFET structures; drift region doping concentration; forward characteristics; on state resistance; reverse blocking voltage; threshold voltage; Breakdown voltage; Conductivity; Doping; Immune system; Ion implantation; MOSFET circuits; Medical simulation; Photonic band gap; Silicon carbide; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435316

Filename

1435316