Title :
Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces
Author :
Sun, Guosheng ; Ning, Jin ; Zhang, Yongxing ; Gao, Xin ; Wang, Lei ; Zhao, Wanshun ; Zeng, Yiping ; Li, Jinmin
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O2 and H2 atmosphere at a temperature of 1150 C. The oxide was investigated by employing X-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics are presented.
Keywords :
MIS structures; atomic force microscopy; chemical vapour deposition; oxidation; photoelectron spectroscopy; secondary ion mass spectroscopy; semiconductor doping; semiconductor epitaxial layers; silicon compounds; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; 1150 C; 1500 C; 20 torr; C2H4; CVD; H2; MOS structures; NH3; O2; Si; SiC; SiH4; ammonia; atomic force microscopy; epilayers; homoepitaxial growth; intentional in-situ doping; secondary ion mass spectroscopy; silicon carbide; surface morphology; thermal oxidization; x-ray photoelectron spectroscopy; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Chemical vapor deposition; Doping; Inductors; Mass spectroscopy; Surface morphology; Temperature; Thermal conductivity;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435318
