High frequency channel noise measurement and characterization in deep submicron MOSFETs

We evaluate several channel thermal noise models suitable for MOSFET devices operating at high frequency. To verify and compare these models, NMOS devices with channel widths of 120 mum (20 mum*6 fingers) and channel lengths of 0.18 mum, 0.36 mum, and 0.54 mum were tested. A comparison between extracted and calculated noise data indicates that a recently published simple model of short channel devices operating at RF frequencies provides the best match between extracted and calculated results for the channel thermal noise over a frequency range of 3 GHz to 6 GHz and a gate overdrive voltage range of 0.2 V to 1.2 V.