ZnO thin films growth, characteristics and applications

Author

Du, Guotong ; Chang, Yuchun ; Zhang, Yuantao ; Ma, Yan ; Yang, Xiaotian ; Zhao, Baijun

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2361

Abstract

Undoped, n-doped and p-type ZnO as well as MgZnO alloy thin films were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire. The structural, optical and electrical properties of ZnO films were investigated using X-ray diffraction (XRD), Raman spectrum, photoluminescence (PL) spectrum, transmission spectra and Hall effect, respectively. ZnO ultraviolet (UV) detectors and acoustic surface wave filter (ASWF) devices were fabricated. Additionally, a new ZnO transistor structure was proposed.

Keywords

Hall effect; MOCVD; X-ray diffraction; electric properties; magnesium compounds; optical properties; photoluminescence; sapphire; semiconductor doping; semiconductor thin films; substrates; surface acoustic wave filters; transistors; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Hall effect; MOCVD; MgZnO; Raman spectrum; UV detectors; X-ray diffraction; ZnO; electrical properties; magnesium zinc oxide; metal-organic chemical vapor deposition; optical properties; photoluminescence spectrum; sapphire substrate; structural properties; thin film growth; transistor structure; transmission spectra; ultraviolet detectors; Acoustic diffraction; Chemical vapor deposition; MOCVD; Optical films; Optical filters; Optical surface waves; Sputtering; Transistors; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435321

Filename

1435321