DocumentCode :
3270432
Title :
Power dissipation of ZnO-based metal oxide varistors (MOVs) for electronic circuit protection
Author :
Mahmud, Sharom ; Abdullah, Mat Johar ; Amin, Zakaria Mohd
Author_Institution :
Malaysia - KDU Coll., Univ. of Sci., Penang, Malaysia
Volume :
3
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
2366
Abstract :
Power dissipation in the high-current (upturn) region of the current-voltage characteristic of ZnO-based metal oxide varistors (MOVs) has been observed to be influenced by the ZnO grain resistivity and nonlinearity. Power dissipation lower than 20 kW was observed in samples with lower grain resistivity values (less than 1 Ωcm) and higher coefficients of nonlinearity (α above 3.2). High concentration of intrinsic defects in ZnO powder could be the underlying cause of the higher grain resistivity, lower α and larger power dissipation.
Keywords :
II-VI semiconductors; electrical resistivity; surge protection; varistors; wide band gap semiconductors; zinc compounds; MOV; ZnO; current-voltage characteristic; electronic circuit protection; grain resistivity; high-current region; intrinsic defects; metal oxide varistors; nonlinear coefficient; power dissipation; semiconducting zinc oxide; transient surge protection; transient voltage surge suppressors; upturn region; Conductivity; Current-voltage characteristics; Electronic circuits; Power dissipation; Protection; Surges; Switches; Varistors; Voltage; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435322
Filename :
1435322
Link To Document :
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