DocumentCode :
3270634
Title :
The SARAM (sequential access and random access memory), a new kind of dual-port memory for communications now and beyond
Author :
Smith, Jeffrey C.
Author_Institution :
Specialty Memory Products & Static RAM Div., Integrated Device Technol. Inc., Salinas, CA, USA
fYear :
1993
fDate :
28-30 Sep 1993
Firstpage :
571
Lastpage :
579
Abstract :
As networks have increased in popularity over the past few years, dual-port RAMs have also increased in popularity. This is attributed to the design simplification using the dual-port RAMs. Currently there are many applications requiring the use of dual-port RAMs. One such is the transfer of data between peripherals and controllers in real time to solve high throughput problems. The current design methods use standard static random access memory devices (SRAMs) and first-in-first-out memory devices (FIFOs). In many cases, dual-port RAM devices are the best design solutions to obtain the required throughput bandwidth. A new dual-port RAM, called the SARAM, offers the best of both synchronous and asynchronous interfaces within a single component. In addition, a single SARAM can handle ALL the ATM bus rates up to the current 2.4 Gbps maximum
Keywords :
integrated circuit design; integrated memory circuits; random-access storage; sequential circuits; two-port networks; 2.4 Gbit/s; ATM bus rates; SARAM; design methods; dual-port memory; sequential access and random access memory; throughput bandwidth; throughput problems; Asynchronous transfer mode; Bandwidth; Bridges; Communication system control; Control systems; Logic; Random access memory; Read-write memory; Telecommunication control; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
WESCON/'93. Conference Record,
Conference_Location :
San Francisco, CA
ISSN :
1095-791X
Print_ISBN :
0-7803-9970-6
Type :
conf
DOI :
10.1109/WESCON.1993.488597
Filename :
488597
Link To Document :
بازگشت