DocumentCode
3270760
Title
Device optimization of multiple-channel FET with 2D Poisson-Schrodinger solver
Author
Kim, Joong-sik ; Won, Taeyoung
Author_Institution
Dept. of Electr. Eng., Inha Univ., Incheon, South Korea
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
128
Lastpage
129
Abstract
Recently, a double-gate (DG) structure has attracted a great deal of attention for its potential as a technology driver for sub-40nm MOSFET. In this paper, we report our quantum-mechanical investigation on mulitple-channel FET in an effort to optimize the device structure.
Keywords
field effect transistors; semiconductor device models; 2D Poisson-Schrodinger solver; device optimization; double gate structure; multiple-channel FET; quantum-mechanical investigation; Electrons; FETs; FinFETs; Lithography; MOSFET circuits; Poisson equations; Quantum mechanics; Schrodinger equation; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203771
Filename
1595247
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