Observation of a sputtered Si surface irradiated by metal cluster complex ions

Author

Teranishi, Y. ; Kondou, K. ; Fujiwara, Y. ; Nonaka, H. ; Yamamoto, K. ; Fujimoto, T. ; Ichimura, S.

Author_Institution

Res. Inst. of Instrum. Frontier, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2005

fDate

25-28 Oct. 2005

Firstpage

146

Lastpage

147

Abstract

In this paper, we report the result of surface sputtering of Si using a proto-type compact cluster ion source which has been developed using Os3(CO)12 as a low damage-sputtering source. The surface roughening of Si under the acceleration energy 10 key at incidence angles about 0° and 60° has been studied. The sputtered Si surface was observed by using AFM (atomic force microscope) and SEM (scanning electron microscope).

Keywords

atomic force microscopy; elemental semiconductors; metal clusters; radiation effects; scanning electron microscopy; silicon; sputtering; surface roughness; surface treatment; Si; acceleration energy; atomic force microscope; incidence angle; low damage-sputtering source; metal cluster complex ions; prototype compact cluster ion; scanning electron microscope; surface roughening; surface sputtering; Atomic force microscopy; Instruments; Ion beams; Ion sources; Mass spectroscopy; Metals industry; Rough surfaces; Scanning electron microscopy; Sputtering; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2005 International

Print_ISBN

4-9902472-2-1

Type

conf

DOI

10.1109/IMNC.2005.203780

Filename

1595256