• DocumentCode
    3270969
  • Title

    Comparison of trimming techniques for sub-lithographic silicon structures

  • Author

    Dreeskornfeld, L. ; Graham, A.P. ; Hartwich, J. ; Landgraf, E. ; Lutz, T. ; Rösner, W. ; Specht, M. ; Risch, L.

  • Author_Institution
    Infineon Technol., Corporate Res., Munich, Germany
  • fYear
    2005
  • fDate
    25-28 Oct. 2005
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    In this paper the limits of trimming techniques are explored. Very thin layers of organic resist material are investigated. Further, extremely small feature sizes down to 8 nm are achieved. Different trimming procedures utilizing resist trimming, HF dip of TEOS hard-mask and sacrificial oxidation are compared.
  • Keywords
    elemental semiconductors; nanolithography; oxidation; resists; silicon; HF dip; TEOS; feature sizes; hard-mask; organic resist material; sacrificial oxidation; sub-lithographic silicon structures; trimming technique; Etching; FinFETs; Hafnium; Inductors; Lithography; Oxidation; Plasma applications; Plasma density; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2005 International
  • Print_ISBN
    4-9902472-2-1
  • Type

    conf

  • DOI
    10.1109/IMNC.2005.203783
  • Filename
    1595259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3270969