Title :
A true nonvolatile analog memory cell using coupling-charge balancing
Author :
Kyu-Hyoun Kim ; Kwyro Lee
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejeon, South Korea
Abstract :
A true nonvolatile analog memory cell with a coupling-charge balancing scheme (CCBS) is proposed as a fast precise analog data storage element that achieves the fastest theoretical programming speed among the various FN-tunneling-based analog memories with simple programming circuitry.
Keywords :
analogue integrated circuits; analogue storage; integrated memory circuits; tunnelling; Fowler-Nordheim tunneling; coupling-charge balancing; data storage element; nonvolatile analog memory cell; programming circuitry; Analog memory; Charge measurement; Coupling circuits; Current measurement; EPROM; Nonvolatile memory; Pulse measurements; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488618
