DocumentCode
3271012
Title
A 2.5 V 256-level non-volatile analog storage device using EEPROM technology
Author
Van Tran, H. ; Blyth, T. ; Sowards, D. ; Engh, L. ; Nataraj, B.S. ; Dunne, T. ; Hai Wang ; Vishal Sarin ; Tin Lam ; Nazarian, H. ; Genda Hu
Author_Institution
Information Storage Devices Inc., San Jose, CA, USA
fYear
1996
fDate
10-10 Feb. 1996
Firstpage
270
Lastpage
271
Abstract
This integrated circuit stores 256 analog voltage levels in high density, non-volatile memory with /spl sim/7.5m V resolution per level. By contrast, the multilevel storage capacity of a typical digital non-volatile memory is 4-level per cell. The integrated circuit operates over a voltage range of 2.5 V to 5.5 V. Previous analog storage implementation use a 5.0 V supply for /spl sim/12 mV equivalent resolution per level in a 128 k EEPROM.
Keywords
CMOS analogue integrated circuits; CMOS memory circuits; EPROM; analogue storage; 2.5 to 5 V; CMOS integrated circuit; EEPROM technology; high density memory; multilevel nonvolatile analog storage device; Driver circuits; EPROM; Filters; Integrated circuit technology; Logic arrays; Nonvolatile memory; Power amplifiers; Sampling methods; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-3136-2
Type
conf
DOI
10.1109/ISSCC.1996.488619
Filename
488619
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