Title :
Electrical transport in high-temperature region of nanowiring grown by focused-ion-beam chemical vapor deposition
Author :
Nakamatsu, Ken-ichiro ; Karida, K. ; Haruyama, Yuich ; Kaito, Takashi ; Ichihashi, Toshinari ; Ochiat, Y. ; Fujita, Jyn-ichi ; Matsui, Shinji
Author_Institution :
Graduate Sch. of Sci., Hyogo Univ., Japan
Abstract :
In this paper, we investigated temperature dependence of resistance of nanowiring in the high temperature region (from room-temperature to 400°C). The FIB system utilizing a beam of 30 KeV Ga ions, and computer pattern generator system that allowed us to control scanning direction and speed of the ion beam were applied to make nanowirings.
Keywords :
chemical vapour deposition; electric resistance; focused ion beam technology; gallium; high-temperature electronics; nanowires; semiconductor growth; 30 keV; FIB system; Ga; computer pattern generator system; control scanning direction; electrical transport; focused-ion-beam chemical vapor deposition; high-temperature region; nanowiring; semiconductor growth; temperature dependence; Chemical technology; Chemical vapor deposition; Electrical resistance measurement; Fabrication; Ion beams; Nanostructures; Optical wavelength conversion; Substrates; Temperature dependence; Wiring;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
DOI :
10.1109/IMNC.2005.203787
