Title :
Ka-band low noise amplifier
Author :
Minnebayev, Vadim
Author_Institution :
SRI Pulsar, Moscow, Russia
Abstract :
A three stage low noise HEMT amplifier has been designed and fabricated for Ka-band applications. The key element of the low noise amplifier is an AlGaAs-GaAs HEMT with a 0.3 μm gate length and a gate width of 60 μm, that was designed and manufactured in SRI “Pulsar” technology. The HEMT has shown a minimum noise figure of 1.7 dB and an associated gain of 4.0 dB at 37 GHz. The three-stage amplifier has demonstrated a gain of 16 dB and a low noise figure of 2.8 dB at 37 GHz, the input and output return losses are better then -21 dB and -23 dB respectively
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; hybrid integrated circuits; microwave integrated circuits; -21 dB; -23 dB; 0.3 micron; 1.7 dB; 16 dB; 2.8 dB; 37 GHz; 4.0 dB; 60 micron; AlGaAs-GaAs; HEMT; III-V semiconductor; Ka-band low noise amplifier; Pulsar technology; SRI; gain; gate length; gate width; hybrid integrated circuit; input return loss; low noise figure; minimum noise figure; output return loss; three stage low noise HEMT amplifier; Circuit noise; Equivalent circuits; Frequency; Gain; HEMTs; Impedance measurement; Low-noise amplifiers; Noise figure; Noise generators; Noise measurement;
Conference_Titel :
Satellite Communications, 1994. ICSC'94., Proceedings of International Conference on
Conference_Location :
Moscow
Print_ISBN :
0-7803-2514-1
DOI :
10.1109/ICSC.1994.523134
