High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region

Author

Donnelly, J.P. ; Walpole, J.N. ; Groves, S.H. ; Bailey, R.J. ; Missaggia, L.J. ; Napoleone, A.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

405

Abstract

Semiconductor lasers and amplifiers with tapered gain regions are well suited for applications requiring high output powers and good spatial mode quality. Operation these large-area devices requires epitaxial material with excellent uniformity. GaAs-based devices have been well demonstrated and we have recently reported InGaAsP/InP tapered lasers and amplifiers that operate at λ=1.3 μm. In this paper, the development of 1.5-μm InGaAsP/InP quantum well material suitable for this type of device is discussed and initial results on high power tapered lasers with near-diffraction limited beam widths fabricated in this material are presented

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; 1.5 micron; InGaAsP-InP; InGaAsP/InP quantum well; epitaxial material; high-power semiconductor laser; large-area device; near-diffraction limited beam width; tapered-gain-region; High power amplifiers; Indium phosphide; Laser modes; Optical materials; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645490

Filename

645490