DocumentCode :
3271177
Title :
Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits
Author :
Luo, Hong ; Wang, Yu ; Cao, Yu ; Xie, Yuan ; Ma, Yuchun ; Yang, Huazhong
Author_Institution :
Dept. of E.E., Tsinghua Univ., Beijing, China
fYear :
2012
fDate :
19-21 Aug. 2012
Firstpage :
183
Lastpage :
188
Abstract :
Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits´ temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4% degradation and 59.9% variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect.
Keywords :
digital circuits; integrated circuit design; nanotechnology; circuit delay; critical reliability concerns; digital circuits; gate sizing techniques; nanoscale circuit design; power supply tuning; random telegraph noise; size 16 nm; temporal performance degradation; Degradation; Delay; Digital circuits; Integrated circuit modeling; Logic gates; Monte Carlo methods; Power supplies; Mitigation technique; Performance degradation; Random telegraph noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on
Conference_Location :
Amherst, MA
ISSN :
2159-3469
Print_ISBN :
978-1-4673-2234-8
Type :
conf
DOI :
10.1109/ISVLSI.2012.35
Filename :
6296470
Link To Document :
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