DocumentCode :
3271329
Title :
Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
Author :
Kim, Jin Soak ; Kim, Eun Kyu ; Choi, Won Jun ; Song, Jin Dong ; Lee, Jung II
Author_Institution :
Dept. of Phys., Hanyang Univ., Seoul, South Korea
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
194
Lastpage :
195
Abstract :
In this study, electrical properties of the InAs/GaAs quantum-dot infrared photodiodes (QDIP) were characterized by performing capacitance-voltage (C-V) and DLTS measurements.
Keywords :
III-V semiconductors; deep level transient spectroscopy; gallium arsenide; indium compounds; infrared detectors; photodetectors; photodiodes; semiconductor quantum dots; DLTS measurements; InAs-InGaAs-GaAs; capacitance-voltage measurement; electrical properties; quantum-dot infrared photodetectors; Atomic force microscopy; Capacitance-voltage characteristics; Dark current; Energy states; Gallium arsenide; Indium gallium arsenide; Performance evaluation; Photodetectors; Quantum dots; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203804
Filename :
1595280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3271329
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