DocumentCode
3271445
Title
Wavelength shifting of GaAs GRINSCH lasers by ion implantation
Author
Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
447
Abstract
In summary, we have successfully demonstrated that proton irradiation can be used to tune the lasing wavelength of GaAs GRINSCH lasers. Up to a few nm shift can be obtained without any serious degradation in the laser performance. These results are very promising for WDM applications, as they require only small shift in wavelengths
Keywords
III-V semiconductors; gallium arsenide; gradient index optics; ion implantation; laser tuning; optical transmitters; proton effects; quantum well lasers; wavelength division multiplexing; GaAs; GaAs GRINSCH lasers; WDM applications; ion implantation; lasing wavelength; proton irradiation; quantum well lasers; wavelength shifting; Annealing; Degradation; Diode lasers; Gallium arsenide; Ion implantation; Optical devices; Optical materials; Photonic band gap; Protons; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645510
Filename
645510
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