DocumentCode
3271592
Title
Development of simultaneous image acquisition optics with transmitted and reflected light for 45nm (hp) node mask inspection
Author
Hirano, Ryoichi ; Yamashita, Kyoji ; Ohira, Katsumi ; Matsuki, Kazuto ; Isomura, Ikunao ; Ogawa, Riki ; Kikuiri, Nobutaka ; Terasawa, Tsuneo
Author_Institution
MIRAI-Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
224
Lastpage
225
Abstract
A novel high-resolution mask inspection platform using DUV wavelength has been reported. It is operated at inspection wavelength of 198.5 nm. The wavelength is nearly equal to the exposure wavelength of ArF laser exposure tool.
Keywords
argon compounds; light reflection; light transmission; masks; micro-optics; 198.5 nm; 45 nm; ArF laser exposure; DUV wavelength; exposure wavelength; high-resolution mask inspection platform; image acquisition optics; light reflection; light transmission; node mask inspection; Image sensors; Inspection; Laser beams; Lenses; Lighting; Lithography; Optical attenuators; Optical imaging; Optical reflection; Optical sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203819
Filename
1595295
Link To Document