• DocumentCode
    3271995
  • Title

    Low-voltage high-isolation RF MEMS switch based on a single crystalline silicon structure with fine gap vertical comb

  • Author

    Moon, Sungsoo ; Kim, Hyeon Cheol ; Chun, Kukjin

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
  • fYear
    2005
  • fDate
    25-28 Oct. 2005
  • Firstpage
    272
  • Lastpage
    273
  • Abstract
    We have designed and fabricated an RF MEMS switch which has -50dB isolation at 2.4 GHz and 6 V operation voltage.
  • Keywords
    elemental semiconductors; microswitches; nanostructured materials; silicon; 2.4 GHz; 6 V; Si; fine gap vertical comb; low-voltage high-isolation RF MEMS switch; single crystalline silicon; Contacts; Coplanar waveguides; Crystallization; Fabrication; Packaging; Radiofrequency microelectromechanical systems; Silicon; Switches; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2005 International
  • Print_ISBN
    4-9902472-2-1
  • Type

    conf

  • DOI
    10.1109/IMNC.2005.203843
  • Filename
    1595319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3271995