Title :
High temperature electronics using silicon technology
Author :
Haslett, J. ; Trofimenkoff, F. ; Finvers, I. ; Sabouri, F. ; Smallwood, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
Abstract :
In this paper, techniques used to realize precision CMOS circuits for use in down-hole oil and gas field applications are described. The focus is on bulk CMOS circuits so that complete mixed analog/digital precision monolithic data acquisition systems can be fabricated in a standard 5 V digital process. Successful designs to date include an A/D converter with 15 b absolute accuracy at 175/spl deg/C in 3 /spl mu/m CMOS, an autozeroed op amp with low-offset voltage and current at 200/spl deg/C in 1.2 /spl mu/m CMOS, and a high-resolution A/D system for resistance bridge transducers incorporating input offset voltage and bias current error suppression in 1.2 /spl mu/m CMOS.
Keywords :
CMOS integrated circuits; analogue-digital conversion; data acquisition; elemental semiconductors; mixed analogue-digital integrated circuits; natural gas technology; oil technology; operational amplifiers; silicon; 1.2 micron; 175 degC; 200 degC; 3 micron; 5 V; A/D converter; Si; absolute accuracy; autozeroed op amp; bias current error suppression; bulk CMOS circuits; down-hole applications; gas field applications; high temperature electronics; high-resolution A/D system; mixed analog/digital circuits; offset current; offset voltage; oil field applications; precision CMOS circuits; precision monolithic data acquisition systems; resistance bridge transducers; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Data acquisition; Petroleum; Process design; Silicon; Temperature; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488735
