A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 /spl mu/m silicon bipolar production technology

Author

Knapp, Herbert ; Wilhelm, Wilhelm ; Rest, Mira ; Trost, Hans-Peter

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1998

fDate

10-12 Aug. 1998

Firstpage

20

Lastpage

23

Abstract

This paper presents a dual-modulus /spl divide/128//spl divide/129 prescaler operating up to 2.5 GHz. It consumes only 3.8 mW from a 2.3 V supply when driving an 8 pF capacitive load. The circuit is operational with supplies ranging from 2 V to over 7 V. With a 2 V supply it consumes only 1.38 mA while still operating up to 2 GHz. The circuit is manufactured in a standard silicon bipolar production process (Siemens B6HF). This 25 GHz-f/sub T/ double-polysilicon technology uses 0.8 /spl mu/m lithography and LOGOS isolation. The chip is mounted in a 6-pin SOT363 SMD package.

Keywords

UHF integrated circuits; bipolar digital integrated circuits; elemental semiconductors; frequency dividers; frequency synthesizers; low-power electronics; prescalers; silicon; 0.8 micron; 1.38 mA; 2.3 V; 2.5 GHz; 3.8 mW; 8 pF; LOGOS isolation; SMD package; Si; Siemens B6HF; bipolar production process; bipolar production technology; capacitive load; double-polysilicon technology; dual-modulus prescaler; frequency synthesizers; lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics and Design, 1998. Proceedings. 1998 International Symposium on

Conference_Location

Monterey, CA, USA

Print_ISBN

1-58113-059-7

Type

conf

Filename

708149