Title :
15 /spl mu/m solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 /spl mu/m CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter
Author :
Woodward, T.K. ; Krishnamoorthy, Ashok V. ; Goossen, K.W. ; Walker, James Alfred ; Lentine, Anthony L. ; Novotny, R.A. ; D´Asaro, L.A. ; Chirovsky, L.M.F. ; Hui, S.P. ; Tseng, B. ; Kossives, D. ; Dahringer, D. ; Leibenguth, R.E. ; Cunningham, John E. ; Ja
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 /spl mu/m/sup 2/, and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attaching GaAs/AlGaAs multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with flip-chip solder bonding. The main unique features are summarized.
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; aluminium compounds; flip-chip devices; gallium arsenide; integrated optoelectronics; optical modulation; optical repeaters; photodetectors; semiconductor quantum wells; 0.8 micron; 1 Gbit/s; 10 mW; 15 micron; CMOS; GaAs-AlGaAs; MOSIS; MQW devices; detectors; flip-chip solder bonding; foundry-grade VLSI; modulators; optical repeater circuit; two-beam smart-pixel receiver/transmitter; Bonding; CMOS technology; Circuits; Gallium arsenide; Joining processes; Optical modulation; Quantum well devices; Repeaters; Silicon; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488737
