The first very low-IF RX, 2-point modulation TX CMOS system on chip Bluetooth solution

Author

Durdodt, C. ; Friedrich, M. ; Grewing, C. ; Hammes, M. ; Hanke, A. ; Heinen, S. ; Oehm, J. ; Pham-Stabner, D. ; Seippel, D. ; Theil, D. ; Van Waasen, S. ; Wagner, E.

Author_Institution

Design Center, Infineon Technol. AG, Dusseldorf, Germany

fYear

2001

fDate

20-22 May 2001

Firstpage

99

Lastpage

102

Abstract

The proposed low cost Bluetooth single-chip solution is implemented in a 0.25 /spl mu/m CMOS technology. The "System On Chip (SOC)" includes all necessary baseband- and RF-parts to achieve full Bluetooth functionality, by occupying 18.5 mm/sup 2/ chip area in total. The maximum current consumption of the analog part is 60 mA. The internal regulated supply voltages of the analog and digital parts are 2.65 V. First measurement results of basic functionalities are discussed in this paper.

Keywords

CMOS integrated circuits; UHF integrated circuits; transceivers; 0.25 micron; 2.65 V; 60 mA; Bluetooth; CMOS single chip; RF integrated circuit; low-IF RX; system-on-a-chip; two-point modulation TX; Baseband; Bluetooth; CMOS technology; Communication standards; Costs; Crosstalk; Power supplies; Regulators; System-on-a-chip; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935651

Filename

935651