Title :
High-power short-wavelength AlGaAs-based broad area lasers-record cw power of 8.5 W cw at 810 nm and high power reliability demonstration at 840 nm
Author :
O´Brien, S. ; Zhao, H. ; Zucker, E. ; Li, B. ; Lang, R.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
In this paper, we report on 810 nm AlGaAs-based lasers that achieve a record maximum power of 8.5 W cw. We also report in this paper the results of an investigation of the reliability of 840 nm lasers operating at powers up to 3 W, a power level which is ~2.5× higher than previously reported reliability studies in this wavelength regime. At an elevated temperature of 60°C and an output power of 2.7 W the extrapolated lifetime is 2 to 5×104 hours
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser reliability; semiconductor lasers; 2.7 to 3 W; 2E4 to 5E4 hour; 60 C; 8.5 W; 810 nm; 840 nm; AlGaAs; CW power; elevated temperature; high-power short-wavelength broad area laser; lifetime; reliability; Degradation; Fiber lasers; Laser modes; Optical losses; Optical materials; Power lasers; Quantum well lasers; Solid lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645531
