• DocumentCode
    3272500
  • Title

    NEMS switches: Opportunities and challenges in emerging IC technologies

  • Author

    Feng, Philip X.-L

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
  • fYear
    2015
  • fDate
    1-3 June 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The active search for candidates of an ideal switching device for low-voltage logic and ultralow-power applications has stimulated new explorations of contact-mode switches (relays) based on micro/nanoelectromechanical systems (MEMS/NEMS). This has been driven by the fundamental advantages that mechanical devices offer, such as ideally abrupt switching with zero off-state leakage, suitable for harsh and extreme environments, and very small footprints (e.g., particularly with NEMS). This digest paper is focused upon reviewing the state-of-the-art NEMS switching devices (particularly Si and SiC NEMS), and the potential and possibilities towards enabling logic circuit components and integration with Si and SiC circuits, respectively. We also discuss the opportunities and challenges in other technical aspects, including materials, processes, device design, nanoscale contacts, lifetime and reliability, scaling, and the perspective of monolithic 3D integration with the advancing 3D transistors.
  • Keywords
    logic circuits; microrelays; nanocontacts; nanoelectromechanical devices; silicon; silicon compounds; three-dimensional integrated circuits; 3D transistor; IC technology; MEMS; NEMS switching device; Si; SiC; contact-mode switch; ideal switching device; integrated circuit technology; logic circuit component; low-voltage logic application; microelectromechanical system; monolithic 3D integration; nanoelectromechanical system; nanoscale contact; relay; ultralow-power application; zero off-state leakage; Logic gates; Nanoelectromechanical systems; Nanoscale devices; Silicon; Silicon carbide; Switches; Three-dimensional displays; 3D integration; NEMS-CMOS integration; leakage current; logic switch; nanoFET; nanoelectromechanical systems (NEMS); power consumption; relay; subthreshold swing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design & Technology (ICICDT), 2015 International Conference on
  • Conference_Location
    Leuven
  • Type

    conf

  • DOI
    10.1109/ICICDT.2015.7165878
  • Filename
    7165878