Title :
A 23-GHz low-noise amplifier in SiGe heterojunction bipolar technology
Author :
Schuppener, G. ; Harada, T. ; Yinggang Li
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
A monolithic low-noise amplifier for operation in the 23-GHz band is presented. The circuit has been designed utilizing an advanced 0.2-micron SiGe heterojunction bipolar technology, featuring npn transistors with f/sub T/ and f/sub max/ of about 90- and 100-GHz, respectively. Measurements show a gain of 21-dB and noise figure of 4.1-dB at 23-GHz, which compare reasonably well with simulated results. The circuit consumes 20-mA from a 2.5-V single supply. To our knowledge, 23 GHz band is the highest operation frequency reported so far for LNA in SiGe technology.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; semiconductor materials; 0.2 micron; 100 GHz; 2.5 V; 20 mA; 21 dB; 23 GHz; 4.1 dB; 90 GHz; LNA; MMIC amplifiers; SiGe; heterojunction bipolar technology; monolithic low-noise amplifier; npn transistors; operation frequency; Bipolar transistor circuits; Circuit simulation; Frequency; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935670
