Transient-field characterization of reverse recovery behavior of diode with interconnection

Author

Dongyan, Wdng ; Linchang, Zhang ; Kesheng, Zhou

Author_Institution

Dept. of Telecommun. & Control Eng., Northern Jiaotong Univ., Beijing, China

fYear

1999

fDate

1999

Firstpage

630

Lastpage

633

Abstract

A novel time domain analytical method based on the TLM for predicting transient fields of loop circuits during the reverse recovery period of a diode is presented. It enables the exact calculation of both the far and near field distributions for the transient process, which is necessary to verify the correct operation of the control unit in the power electronics converters. Retardation has to be taken into account in the calculation to ensure exact results. The computed results show good agreement with the measured ones

Keywords

electromagnetic compatibility; electromagnetic interference; power convertors; power semiconductor diodes; time-domain analysis; transient analysis; transmission line theory; control unit; diode; far field distributions; interconnection; loop circuits; near field distributions; power electronics converters; reverse recovery behavior; time domain analytical method; transient-field characterization; Diodes; Electromagnetic fields; Electromagnetic interference; Electromagnetic measurements; Electromagnetic transients; Integrated circuit interconnections; Power electronics; Power system transients; Time domain analysis; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 1999 International Symposium on

Conference_Location

Tokyo

Print_ISBN

4-9980748-4-9

Type

conf

DOI

10.1109/ELMAGC.1999.801407

Filename

801407