Title :
A wide dynamic range switched-LNA in SiGe BiCMOS
Author :
Nakatani, T. ; Itoh, J. ; Imanishi, I. ; Ishikawa, O.
Author_Institution :
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A wide dynamic range, high current efficient switched-LNA has been developed by using SiGe BiCMOS technology. The low loss RF MOSFET reduced silicon substrate effect at high frequency is used as a bypass switch of LNA. The 800-900 MHz LNA is demonstrated in this work in high gain/low distortion mode for transmitting and receiving simultaneously, the amplifier achieves 15.3 dB gain, 1.4 dB noise figure and +1.6 dBm IIP3 with 5.9 mA DC current. In high gain/low current mode for receiving only, 13.3 dB gain, 1.6 dB noise figure and -0.6 dBm IIP3 are achieved with 3.0 mA. In low gain mode, 1.5 dB insertion loss and +16.1 dBm IIP3 with <10 uA are realized by the bypass switch. The switched-LNA is housed in a very small and low cost SON12 plastic package with a Down-Mixer.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; semiconductor materials; switched networks; wideband amplifiers; 1.5 dB; 1.6 dB; 13.3 dB; 14.3 dB; 15.3 dB; 3.0 mA; 5.9 mA; 800 to 900 MHz; IIP3; RF MOSFET; SON12 plastic package; SiGe; SiGe BiCMOS technology; bypass switch; current efficiency; distortion; down-mixer; dynamic range; gain; insertion loss; noise figure; silicon substrate; switched LNA; BiCMOS integrated circuits; Dynamic range; Gain; Germanium silicon alloys; Low-noise amplifiers; MOSFET circuits; Noise figure; Radio frequency; Silicon germanium; Switches;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6601-8
DOI :
10.1109/RFIC.2001.935680
