Dual bias feed SiGe HBT low noise linear amplifier

Author

Taniguchi, E. ; Maeda, K. ; Ikushima, T. ; Sadahiro, K. ; Itoh, K. ; Suematsu, N. ; Takagi, T.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

fYear

2001

fDate

20-22 May 2001

Firstpage

227

Lastpage

230

Abstract

A 2 GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5 dB compared with the conventional resistor feed LNA.

Keywords

Ge-Si alloys; UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; heterojunction bipolar transistors; semiconductor materials; 2 GHz; P1dB; SiGe; SiGe HBT low noise amplifier; diode/resistor dual bias feed circuit; distortion; linearity; saturation power; Circuit noise; Current supplies; Diodes; Feeds; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Low-noise amplifiers; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935681

Filename

935681