A GaAs HBT 5.8 GHz OFDM transmitter MMIC chip set

Author

Raghavan, A. ; Gebara, E. ; Lee, C.-H. ; Chakraborty, S. ; Mukherjee, D. ; Bhattacharjee, J. ; Heo, D. ; Laskar, J.

Author_Institution

Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2001

fDate

20-22 May 2001

Firstpage

267

Lastpage

270

Abstract

This paper presents a GaAs/AlGaAs HBT transmitter MMIC chip set consisting of a power amplifier, a mixer and a voltage-controlled oscillator (VCO) for 5.8 GHz OFDM applications. The performance of the transmitter in an OFDM system is investigated by means of envelope co-simulation of the circuit in an OFDM transmitter simulation platform that conforms to the IEEE 802.11a wireless LAN standard. To the best of our knowledge, this research represents the first reported implementation of an OFDM transmitter in GaAs HBT technology.

Keywords

III-V semiconductors; OFDM modulation; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; radio transmitters; 5.8 GHz; GaAs-AlGaAs; GaAs/AlGaAs HBT MMIC chip set; IEEE 802.11a wireless LAN standard; OFDM transmitter; envelope co-simulation; mixer; power amplifier; voltage controlled oscillator; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Inductors; Linearity; MMICs; OFDM; Power amplifiers; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Conference_Location

Phoenix, AZ, USA

ISSN

1529-2517

Print_ISBN

0-7803-6601-8

Type

conf

DOI

10.1109/RFIC.2001.935690

Filename

935690