Title :
Monolithic integration of InGaAs-GaAs MQW DBR lasers with external cavity electroabsorption modulators
Author_Institution :
Lab. of Microelectron., Illinois Univ., Urbana, IL, USA
Abstract :
In this paper, InGaAs-GaAs MQW DBR lasers with monolithically integrated external cavity electroabsorption modulators fabricated using selective-area metalorganic chemical vapor deposition (MOCVD), and also fabricated using uniform material will be discussed
Keywords :
CVD coatings; III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; optical fabrication; quantum well lasers; InGaAs-GaAs; InGaAs-GaAs MQW DBR laser; external cavity electroabsorption modulator; fabrication; metalorganic chemical vapor deposition; monolithic integration; selective area epitaxy; Chemical lasers; Distributed Bragg reflectors; Epitaxial growth; Etching; Gallium arsenide; Gratings; Monolithic integrated circuits; Optical device fabrication; Power generation; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645549
