• DocumentCode
    3273232
  • Title

    Narrow-gap semiconductor as the all-ware detector from near IR to mm wave regions

  • Author

    Sizov, F. ; Dobrovolsky, V. ; Kamenev, Yu. ; Smirnov, Alexander ; Zabudsky, V.

  • Author_Institution
    Inst. of Semicond. Phys., NASU, Kiev
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Technology advances combined with physical properties of mercury cadmium telluride (MCT) empower its applications in IR and sub-mm technical vision systems. Properties of MCT detectors manufactured both for IR, mm and sub-mm (THz) regions are discussed.
  • Keywords
    II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; millimetre wave detectors; narrow band gap semiconductors; submillimetre wave detectors; terahertz wave detectors; Hg1-xCdxTe; IR detectors; THz detectors; mercury cadmium telluride detector; mm detectors; narrow-gap semiconductor; physical properties; sub-mm detectors; Bolometers; Cadmium compounds; Electrons; Hot carrier effects; Infrared detectors; Plasma temperature; Radiation detectors; Semiconductor materials; Temperature dependence; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
  • Conference_Location
    Pasadena, CA
  • Print_ISBN
    978-1-4244-2119-0
  • Electronic_ISBN
    978-1-4244-2120-6
  • Type

    conf

  • DOI
    10.1109/ICIMW.2008.4665455
  • Filename
    4665455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3273232