Title :
Narrow-gap semiconductor as the all-ware detector from near IR to mm wave regions
Author :
Sizov, F. ; Dobrovolsky, V. ; Kamenev, Yu. ; Smirnov, Alexander ; Zabudsky, V.
Author_Institution :
Inst. of Semicond. Phys., NASU, Kiev
Abstract :
Technology advances combined with physical properties of mercury cadmium telluride (MCT) empower its applications in IR and sub-mm technical vision systems. Properties of MCT detectors manufactured both for IR, mm and sub-mm (THz) regions are discussed.
Keywords :
II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; millimetre wave detectors; narrow band gap semiconductors; submillimetre wave detectors; terahertz wave detectors; Hg1-xCdxTe; IR detectors; THz detectors; mercury cadmium telluride detector; mm detectors; narrow-gap semiconductor; physical properties; sub-mm detectors; Bolometers; Cadmium compounds; Electrons; Hot carrier effects; Infrared detectors; Plasma temperature; Radiation detectors; Semiconductor materials; Temperature dependence; Temperature sensors;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665455
