• DocumentCode
    3273299
  • Title

    Benefits of decomposing wide CMOS transistors into minimum-size gates

  • Author

    Berge, Hans Kristian Otnes ; Aunet, Snorre

  • Author_Institution
    Dept. of Inf., Univ. of Oslo, Oslo, Norway
  • fYear
    2009
  • fDate
    16-17 Nov. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper we show how decomposition of a wide CMOS transistor into a multi-finger FET with gates of minimum size can be beneficial for the reduction of delay and power-delay products in logic gates. This design possibility, which we call a minimum-split transistor (MST), seems to be largely overlooked in the literature. In a 90 nm CMOS process we compare the design to wide transistors. By exploiting the narrow-width effect, reduced parasitic capacitances from a shorter active channel and increased gate-drain spacing, we achieve up to 75-85% higher operation speed at a similar or reduced power consumption. The worst-case timing delay is reduced by 35-40% along with the nominal values. The design technique is considered valuable, in particular for critical time paths. The paper takes the perspective of subthreshold logic design at 200 mV, but the technique is also useful above threshold. A statistical experiment also investigates how Vth variation in MSTs changes with the number of parallell gates.
  • Keywords
    CMOS logic circuits; field effect transistors; logic design; logic gates; CMOS transistor; gate-drain spacing; logic gates; minimum-size gates; minimum-split transistor; multifinger FET; parasitic capacitance; size 90 nm; CMOS logic circuits; CMOS process; Capacitance; Delay; Energy consumption; Implants; Informatics; Logic design; Ring oscillators; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NORCHIP, 2009
  • Conference_Location
    Trondheim
  • Print_ISBN
    978-1-4244-4310-9
  • Electronic_ISBN
    978-1-4244-4311-6
  • Type

    conf

  • DOI
    10.1109/NORCHP.2009.5397795
  • Filename
    5397795