Device modelling for 60 GHz radio front-ends in 65 nm CMOS

Author

Tao, Sha ; Rodriguez, Saul ; Rusu, Ana ; Ismail, Mohammed

Author_Institution

Sch. of Inf. & Commun. Technol., RaMSiS Group, R. Inst. of Technol., Stockholm, Sweden

fYear

2009

fDate

16-17 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents an electromagnetic simulation-based modelling solution for active and passive devices which targets 60 GHz front-end integrated circuits. An EM model, using existing transistor compact models as core, is developed to account for the parasitic elements due to wiring stacks. A spiral inductor lumped model, based on EM simulation S-parameter data is also derived. The models are process and layout dependent, which have been verified by the design of a low noise amplifier in a 60 GHz radio front-end.

Keywords

CMOS integrated circuits; electromagnetic waves; millimetre wave circuits; CMOS; EM model; device modelling; electromagnetic simulation-based modelling; frequency 60 GHz; parasitic elements; radio front-ends; size 65 nm; spiral inductor lumped model; wiring stacks; Circuit simulation; Electromagnetic devices; Electromagnetic modeling; Inductors; Integrated circuit modeling; Low-noise amplifiers; Scattering parameters; Semiconductor device modeling; Spirals; Wiring; 60 GHz; ADS; EM simulation; LNA; mm-wave MOS model; nanoscale CMOS; spiral inductor model;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2009

Conference_Location

Trondheim

Print_ISBN

978-1-4244-4310-9

Electronic_ISBN

978-1-4244-4311-6

Type

conf

DOI

10.1109/NORCHP.2009.5397803

Filename

5397803