• DocumentCode
    3273440
  • Title

    Compliant die-package interconnects at high frequencies

  • Author

    Braunisch, Henning ; Hwang, Kyu-Pyung ; Emery, Richard D.

  • Author_Institution
    Intel Corp., Chandler, AZ, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    1-4 June 2004
  • Firstpage
    1237
  • Abstract
    We investigate the concern that compliant interconnects due to their generally long, thin shape will introduce extra insertion loss for high-frequency signals, due to the added inductance at the die-package interface. We show that, as expected, an increase of the inductance in an inductive and resistive transition always causes additional insertion loss. However, in a complete system on-die drivers and receivers are connected to the die-package interface. Considering a capacitive and inductive-resistive transition, we show that for a given total pad capacitance there exists an optimal inductance that leads to a minimization of the insertion loss at the die-package interface. We refer to this as the pad capacitance compensation effect. As a significant finding, it appears that compliant interconnects can add some but not too much inductance at the die-package interface, so that the high-speed performance is actually improved. As an electromagnetically sound proof of the pad capacitance compensation concept, we perform full-wave simulations of variations of a generic die-package interface. Helical spring structures with different pitches and standard bumps are compared. Based on an appropriate post-processing of the simulation results the pad capacitance compensation effect for compliant interconnects is confirmed. As a final step, equivalent lumped-element representations (with frequency-dependent parameters) are derived directly from the simulated S parameters and a comparison with a 3-D quasistatic computation is made. This shows that the improved insertion loss for compliant interconnects is indeed correlated with an increased inductance of the structures.
  • Keywords
    S-parameters; capacitance; equivalent circuits; flip-chip devices; inductance; interconnections; lumped parameter networks; 3-D quasistatic computation; additional insertion loss; capacitive transition; compliant die-package interconnects; die-package interface; equivalent lumped-element representations; first-order model; flip chip packaging; full-wave simulations; helical spring structures; high frequencies; inductance increase; inductive transition; optimal inductance; pad capacitance compensation effect; resistive transition; simulated S parameters; Capacitance; Dielectric constant; Dielectric materials; Frequency; Impedance; Inductance; Insertion loss; Packaging; Scattering parameters; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2004. Proceedings. 54th
  • Print_ISBN
    0-7803-8365-6
  • Type

    conf

  • DOI
    10.1109/ECTC.2004.1320272
  • Filename
    1320272