Spectroscopy of THz radiation induced by impact ionization of shallow acceptors in Ge

Author

Andrianov, A.V. ; Zakharin, A.O. ; Zinovev, N.N.

Author_Institution

A.F. Ioffe Phys. Tech. Inst., St. Petersburg

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

1

Lastpage

2

Abstract

We report results of spectroscopic studies of terahertz (THz) spontaneous emission at conditions of electrical breakdown of impurity centers in Ge(Ga) with Na-Nd~ 1.6x10¹⁴ cm^-3. The samples were deformation-free or subjected to compressive strain along [111] axis. The experiments were performed at T~5 K with using a step-scan Fourier spectrometer. The maximum level of the compressive strain was 3 kbar.

Keywords

Fourier transform spectra; compressive strength; electric breakdown; elemental semiconductors; gallium; germanium; impact ionisation; impurity states; spontaneous emission; terahertz wave spectra; Ge:Ga; compressive strain; electrical breakdown; impact ionization; impurity centers; shallow acceptors; step-scan Fourier spectrometer; terahertz spontaneous emission; Biomedical optical imaging; Crystals; Electric breakdown; Electroluminescence; Impact ionization; Impurities; Ionizing radiation; Polarization; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on

Conference_Location

Pasadena, CA

Print_ISBN

978-1-4244-2119-0

Electronic_ISBN

978-1-4244-2120-6

Type

conf

DOI

10.1109/ICIMW.2008.4665469

Filename

4665469