Title :
Scaling Non-Volatile Memory Below 30nm
Author_Institution :
Micron Technol. Inc., Boise
Abstract :
The future scaling challenges of non-volatile memories for 32 Gb+ using 30 nm and below feature sizes are discussed. The key challenges reviewed include structural integrity, floating gate scaling, floating gate replacement, noise and variation. Future trends are discussed.
Keywords :
nanoelectronics; random-access storage; floating gate replacement; floating gate scaling; nonvolatile memory scaling; Charge transfer; Degradation; Dielectrics; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Space charge; Stress; Threshold voltage; 30nm; floating gate elimination; mechanical stress; noise; non-volatile memory; scaling; variation;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290561
