DocumentCode
3273694
Title
Thermal analysis of on-chip interconnects in multicore systems
Author
Vaddina, Kameswar Rao ; Liljeberg, Pasi ; Plosila, Juha
Author_Institution
Turku Center for Comput. Sci. (TUCS), Turku, Finland
fYear
2009
fDate
16-17 Nov. 2009
Firstpage
1
Lastpage
4
Abstract
As the temperature increases, interconnect delay increases due to the linear increase in electrical resistivity. This degrades the performance and shortens the interconnects life time. Package reliability will also be severely affected by the resulting thermal hotspots, thus impacting the overall performance of multicore systems. We approach this challenge by proposing to use thermal management techniques with the help of architectural thermal model of a multicore system running on a network with interconnects spawning across it. In this regard we have analysed the spatial thermal profile of the global Cu nanowire for on-chip interconnects in 65nm CMOS technology from ST microelectronics. The average temperature rise ¿T due to signaling, along the length of the conductor has been found to be around 6.8°C for a global interconnection link. The impact of this temperature rise along the interconnects has been analysed with two different signal transmission systems namely current-mode and voltage-mode signaling.
Keywords
CMOS integrated circuits; chip scale packaging; copper; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; nanoelectronics; nanowires; semiconductor process modelling; thermal management (packaging); CMOS technology; Cu; architectural thermal model; complementary metal-oxide-semiconductor; current-mode signaling; electrical resistivity; global Cu nanowire; global interconnection link; interconnect delay; interconnect lifetime; multicore systems; network interconnects; on-chip interconnects; package reliability; signal transmission systems; size 65 nm; spatial thermal profile; temperature rise; thermal analysis; thermal hotspots; thermal management techniques; voltage-mode signaling; CMOS technology; Delay; Electric resistance; Multicore processing; Packaging; Semiconductor device modeling; System-on-a-chip; Temperature; Thermal degradation; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
NORCHIP, 2009
Conference_Location
Trondheim
Print_ISBN
978-1-4244-4310-9
Electronic_ISBN
978-1-4244-4311-6
Type
conf
DOI
10.1109/NORCHP.2009.5397817
Filename
5397817
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