Small-signal and noise modeling of submicrometer self aligned bipolar transistor

Author

Rinaudo, Salvatore ; Privitera, Giuseppe ; Ferla, Giuseppe ; Galluzzo, Agostino

Author_Institution

STMicroelectronics, Catania, Italy

fYear

1998

fDate

9-12 Aug 1998

Firstpage

347

Lastpage

350

Abstract

This paper presents an approach to get a full characterization of microwave bipolar transistors starting from S-parameters measurement only. The analytical form of the Y-matrix representation is derived starting from the π-hybrid model (Giacoletto, 1954) and it is used to directly and accurately extract all the parameters of the model. In the second part of the paper the noise sources are added to the equivalent model, and the analytical expression of noise figure is obtained. This expression is used to obtain a full set of noise parameters to characterize the behaviour of the bipolar microwave transistors

Keywords

S-parameters; equivalent circuits; microwave bipolar transistors; semiconductor device models; semiconductor device noise; π-hybrid model; S-parameters; Y-matrix representation; characterization; equivalent model; microwave bipolar transistors; noise figure; noise modeling; noise sources; small-signal modeling; submicrometer self aligned bipolar transistor; Analytical models; Bipolar transistors; Circuit noise; Data mining; Equivalent circuits; Frequency; Integrated circuit modeling; Noise figure; Nonlinear equations; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE

Conference_Location

Colorado Springs, CO

Print_ISBN

0-7803-4988-1

Type

conf

DOI

10.1109/RAWCON.1998.709208

Filename

709208