Title :
Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition
Author :
Kato, Hiromitsu ; Sakai, Shingo ; Takami, Akihiro ; Ohki, Yoshimichi ; Ishii, Keisuke
Author_Institution :
Dept. of Electr. & Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
Abstract :
Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented
Keywords :
dielectric thin films; electric breakdown; electric strength; fluorine; plasma CVD coatings; silicon compounds; CF4; F-doped SiO2 films; SiO2:F; chemical vapor deposition; dielectric breakdown; dielectric strength; plasma-enhanced CVD; self-healing breakdown technique; short duration voltage pulses; tetraethoxysilane; Breakdown voltage; Chemical vapor deposition; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Plasma chemistry; Plasma measurements; Pulse measurements; Semiconductor films; Silicon compounds;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location :
Vasteras
Print_ISBN :
0-7803-4237-2
DOI :
10.1109/ICSD.1998.709302
