Title :
A New CMOS Logic Anti-Fuse Cell with Programmable Contact
Author :
Huang, Chia-En ; Chen, Hsin-Ming ; Chen, May-Be ; King, Ya-Chin ; Lin, Chrong-Jung
Author_Institution :
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan, R.O.C., Phone/Fax: +886-3-5162182/+886-3-5721804
Abstract :
A new fully CMOS process compatible anti-fuse device with programmable contact has been developed for advanced programmable logic applications. This anti-fuse processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/off window. It exhibits superior disturb immunity in program and read operations. The device additionally provides the capability to adapt multiple programmable contacts for the needs of elevated data writing and reading performance. This novel anti-fuse cell is a very promising programmable logic solution with fully CMOS logic compatible process below 0.13¿m node.
Keywords :
Breakdown voltage; CMOS logic circuits; CMOS process; CMOS technology; Contacts; Electric breakdown; Logic devices; Logic programming; Programmable logic arrays; Programmable logic devices; RPO; anti-fuse; contact; oxide breakdown;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290576
