Title :
A 1Mb High-Density Toggle-MRAM with Symmetrical Read/Write Operations
Author :
Tanizaki, Hiroaki ; Tsuji, Takaharu ; Otani, Jun ; Yamaguchi, Yuichiro ; Murai, Yasumitsu ; Hayashikoshi, Masanori ; Hidaka, Hideto
Author_Institution :
Renesas Design Corp., Itami
Abstract :
A high-density MRAM cell structure, 1T-4MTJ cell is successfully applied to a Toggle-mode MRAM, with reduced effective cell array size and symmetrical Read/Write operations. A lMb-lT-4MTJ Toggle MRAM with 66 MHz operation (tAC = 43.4 nsec) is demonstrated.
Keywords :
CMOS digital integrated circuits; random-access storage; bandwidth 66 MHz; cell array size; high-density MRAM cell structure; high-density Toggle-MRAM; size 130 nm; storage capacity 1 Mbit; symmetrical read-write operations; Decoding; Driver circuits; Intrusion detection; Magnetization; Operational amplifiers; Timing; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290582
