• DocumentCode
    3274005
  • Title

    A 1Mb High-Density Toggle-MRAM with Symmetrical Read/Write Operations

  • Author

    Tanizaki, Hiroaki ; Tsuji, Takaharu ; Otani, Jun ; Yamaguchi, Yuichiro ; Murai, Yasumitsu ; Hayashikoshi, Masanori ; Hidaka, Hideto

  • Author_Institution
    Renesas Design Corp., Itami
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    63
  • Lastpage
    65
  • Abstract
    A high-density MRAM cell structure, 1T-4MTJ cell is successfully applied to a Toggle-mode MRAM, with reduced effective cell array size and symmetrical Read/Write operations. A lMb-lT-4MTJ Toggle MRAM with 66 MHz operation (tAC = 43.4 nsec) is demonstrated.
  • Keywords
    CMOS digital integrated circuits; random-access storage; bandwidth 66 MHz; cell array size; high-density MRAM cell structure; high-density Toggle-MRAM; size 130 nm; storage capacity 1 Mbit; symmetrical read-write operations; Decoding; Driver circuits; Intrusion detection; Magnetization; Operational amplifiers; Timing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290582
  • Filename
    4290582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274005