Hybrid charge trap memory device with TaN nanocrystals formed by phase separation methods

Author

Choi, Hyejung ; Jung, Seung-Jae ; Park, Hokyung ; Lee, Joon-Myung ; Kwon, Moonjae ; Chang, Man ; Hasan, Musarrat ; Hwang, Hyunsang

Author_Institution

Gwangju Inst. of Sci. & Technol., Gwangju

fYear

2007

fDate

26-30 Aug. 2007

Firstpage

73

Lastpage

74

Abstract

Hybrid charge trapping layer consisting of TaN nanocrystals (NCs) and silicon nitride (SiN) has been fabricated and characterized for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory device. After annealing at 900degC, TaN NCs with average sizes of 3.5nm were formed by the phase separation method. Compared with a control sample without NC, memory devices with TaN NCs exhibit superior memory characteristics. The improvement can be explained by the formation of high density TaN NCs with a deeper trap energy level.

Keywords

electron traps; nanostructured materials; semiconductor storage; silicon compounds; tantalum compounds; wide band gap semiconductors; SONOS type nonvolatile memory device; SiN; TaN; hybrid charge trap memory device; nanocrystals; phase separation method; silicon nitride; silicon-oxide-nitride-oxide-silicon; Amorphous magnetic materials; Amorphous materials; Annealing; Magnetic separation; Nanocrystals; Radio frequency; SONOS devices; Silicon compounds; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0753-2

Electronic_ISBN

1-4244-0753-2

Type

conf

DOI

10.1109/NVSMW.2007.4290586

Filename

4290586