Title :
A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory
Author :
Chang, Y.W. ; Wu, G.W. ; Chen, P.C. ; Chen, C.H. ; Yang, I.C. ; Chin, C.Y. ; Huang, I.J. ; Tsai, W.J. ; Lu, T.C. ; Lu, W.P. ; Chen, K.C. ; Lu, C.Y.
Author_Institution :
Technol. Dev. Center Ltd., Hsinchu
Abstract :
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.
Keywords :
flash memories; integrated circuit noise; interference; nanoelectronics; floating-gate flash memory; interference phenomenon; nitride-based flash memory; Analytical models; Dielectrics; Electric potential; Electrons; Flash memory; Flash memory cells; Interference; Monitoring; Nonvolatile memory; Testing;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0753-2
Electronic_ISBN :
1-4244-0753-2
DOI :
10.1109/NVSMW.2007.4290590
