• DocumentCode
    3274272
  • Title

    A Consistent Model for the SANOS Programming Operation

  • Author

    Furnemont, A. ; Rosmeulen, M. ; Cacciato, A. ; Breuil, L. ; De Meyer, K. ; Maes, H. ; Van Houdt, J.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2007
  • fDate
    26-30 Aug. 2007
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    An accurate model for the SANOS programming operation has been developed. Excellent agreement between measurements and simulations in a large range of voltages and times is obtained, taking leakage through the gate stack and Frenkel-Poole detrapping into account. The model is exploited to predict the impact of the programming conditions on the retention behavior.
  • Keywords
    flash memories; Frenkel-Poole detrapping; SANOS programming operation; SiO2-SiN-Al2O3; flash memories; gate stack; Current measurement; Electron traps; Electronic mail; Flash memory; Genetic programming; Predictive models; Temperature measurement; Temperature sensors; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2007 22nd IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0753-2
  • Electronic_ISBN
    1-4244-0753-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2007.4290597
  • Filename
    4290597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3274272